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SGW15N60RUF
IGBT
SGW15N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G E
D2-PAK
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGW15N60RUF 600 20 24 15 45 10 160 64 -55 to +150 -55 to +150 300
Units V V A A A us W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. --Max. 0.77 40 Units C/W C/W
Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material)
(c)2002 Fairchild Semiconductor Corporation
SGW15N60RUF Rev. A1
SGW15N60RUF
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---948 101 33 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----17 33 44 118 320 356 676 20 34 48 212 340 695 1035 -42 7 17 7.5 --65 200 --950 --70 350 --1450 -60 10 24 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH
VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 15A, VGE = 15V Measured 5mm from PKG
(c)2002 Fairchild Semiconductor Corporation
SGW15N60RUF Rev. A1
SGW15N60RUF
50 45 40 Common Emitter T C = 25
20V
45 15V 12V 40 Common Emitter VGE = 15V TC = 25 TC = 125 ------
Collector Current, IC [A]
8
35 30 25 20 15 10 5 0
Collector Current, IC [A]
35 30 25 20 15 10 5 0 0 2 4 6 VGE = 10V
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
24 Common Emitter V GE = 15V
Collector - Emitter Voltage, VCE [V]
V CC = 300V Load Current : peak of square wave
3.5
30A
20
3.0
Load Current [A]
16
2.5 15A 2.0 IC = 8A 1.5
12
8
4
1.0 -50 0 50 100 150
0
Duty cycle : 50% T C = 100 Power Dissipation = 25W 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25
20 Common Emitter T C = 125 16
Collector - Emitter Voltage, V CE [V]
16
12
Collector - Emitter Voltage, V CE [V]
12
8
8 30A 4 IC = 7A 0 15A
30A 4 IC = 7A 0 0 4 8 12 16 20 15A
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGW15N60RUF Rev. A1
SGW15N60RUF
1800
1500
Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies
Capacitance [pF]
Common Emitter V CC = 300V, V GE = 15V IC = 15A T C = 25 T C = 125 ------
Ton
1200
Switching Time [ns]
100
Tr
900 Coes
600
Cres 300
0 1 10
10 1 10 100
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------
Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------
Switching Loss [uJ]
Toff
1000 Eoff Eon Eoff
Toff Tf
Tf 100 100 1 10 100 1 10 100
Gate Resistance, R G [ ]
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 -----Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------
Switching Time [ns]
Ton
100
Switching Time [ns]
Tr
Toff Tf Toff 100 Tf
10 5 10 15 20 25 30 5 10 15 20 25 30
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGW15N60RUF Rev. A1
SGW15N60RUF
15
Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------
Gate - Emitter Voltage, VGE [ V ]
12
Common Emitter R L = 20 T C = 25 VCC = 100 V 300 V
Switching Loss [uJ]
Eoff 1000 Eoff
9
200 V
6
Eon
3
100 5 10 15 20 25 30
0 0 10 20 30 40 50
Collector Current, IC [A]
Gate Charge, Q g [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed) 50us 100us 1
100
Collector Current, I C [A]
10 DC Operation
Collector Current, IC [A]
IC MAX. (Continuous)
10
1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
Safe Operating Area VGE = 20V, TC = 100 1 1 10 100 1000
0.1
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response, Zthjc [/W]
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01
Pdm t1
single pulse 1E-3 10
-5
t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGW15N60RUF Rev. A1
SGW15N60RUF
Package Dimension
D2-PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.54 0.30
SGW15N60RUF Rev. A1
2.40 0.20
4.90 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
0
~3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(7.20) 0.80 0.10 4.90 0.20
(2XR0.45)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation
9.20 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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